?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 he t c 4376 (npn) general purpose transistor replacement type : ktc4376 features ? small flat package ? high current application ? complementary t o hea1664 maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =1ma,i e =0 35 v collector-emitter breakdown voltage v ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 100 na emitter cut-off current i ebo v eb =5v,i c =0 100 na dc current gain h fe(1) v ce =1v,i c =100ma 100 320 h fe(2) v ce =1v,i c =700ma 35 collector-emitter saturation voltage v ce (sat) i c =500ma ,i b =20ma 0.5 v base-emitter voltage v be v ce =1v,i c =10ma 0.5 0.8 v output capacitance c ob v cb =10v,i e =0,f=1mhz 13 pf transition frequency f t v ce =5v,i c =10ma, 120 mhz classification of h fe rank o y range 100-200 160-320 marking po py parameter symbol value unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current-continuous i c 800 ma collector power dissipation p c 500 mw thermal resistance from junction t o ambient r ja 250 c/w junction temperature t j 150 c storage temperature t stg -55~+150 c sot-89 1:base 2:collector 3:emitter
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HETC4376(npn) general purpose transistor typical characteristics 1 10 100 0 100 200 300 400 1 10 100 10 100 0.1 1 10 1 10 100 200 400 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1 10 100 0.0 0.4 0.8 1.2 0.0 0.5 1.0 1.5 2.0 2.5 0 40 80 120 160 800 f t i c h fe common emitter v ce =1v 30 300 3 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 30 300 30 3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =25 t a =25 t a =100 i c v cesat 600 300 10 30 100 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib capacitance c (pf) 100 5 30 v ce =5v t a =25 transition frequency f t (mhz) collector current i c (ma) collector power dissipation p c (mw) ambient temperature t a ( ) p c t a 800 800 v be i c 300 30 3 t a =25 t a =100 common emitter v ce =1v collector current i c (ma) base-emmiter voltage v be (v) 800 30 3 =25 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 300 i c v besat 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 100ua i b =50ua common emitter t a =25
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 he t c 4376 (npn) general purpose transistor sot-89 package outline dimensions symbol d i m e n s i on s i n m i l l i m e t e r s d i m e n s i o n s i n i n c h e s min. max. min. max. a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 1.550ref. 0.061ref. e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e 1.500typ. 0.060typ. e1 3.000typ. 0.118typ. l 0.900 1.200 0.035 0.047
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 he t c 4376 (npn) general purpose transistor sot-89 tape and reel dimensionsareinmillimeter type a b c d e f p0 p p1 w sot-89 4.85 4.45 1.85 ? 1.50 1.75 5.50 4.00 8.00 2.00 12.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 sot-89 tape leader and trailer sot-89 reel dimnsionsareinmillimetere reeloption d d1 d2 g h i w1 w2 7 dia ? 180 60.00 r32.00 r86.50 r30.00 ? 13.00 13.20 16.50 tolerance 2 1 1 1 1 1 1 1 empty pockets empty pockets leader tape components
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